1 C4D20120A silicon carbide schottky diode z -r ec ? r ectifier features ? 1.2kv schottky rectifer ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching ? extremely fast switching benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? power factor correction ? motor drives package to-220-2 maximum ratings (t c =25c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1300 v v r dc peak reverse voltage 1200 v i f continuous forward current 53.5 25.5 20 a t c =25?c t c =135?c t c =150?c i frm repetitive peak forward surge current 91 61 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i fsm non-repetitive forward surge current 130 110 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i f,max non-repetitive peak forward current 1150 950 a t c =25?c, t p =10 m s, pulse t c =110?c, t p =10 m s, pulse p tot power dissipation 242 104 w t c =25?c t c =110?c t j operating junction range -55 to +175 ?c t stg storage temperature range -55 to +135 ?c to-220 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw part number package marking C4D20120A to-220-2 c4d20120 pin 1 pin 2 case v rrm = 1200 v i f ( t c =135?c) = 25.5 a q c = 99 nc C4D20120A rev. c
2 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 2.2 1.8 3 v i f = 20 a t j =25c i f = 20 a t j =175c i r reverse current 35 65 200 400 a v r = 1200 v t j =25c v r = 1200 v t j =175c q c total capacitive charge 99 nc v r = 800 v, i f = 20a d i /d t = 200 a/s t j = 25c c total capacitance 1500 93 67 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 0.62 c/w typical performance figure 1. forward characteristics 0 5 10 15 20 25 30 35 40 0 1 2 3 4 figure 2. reverse characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 500 1000 1500 t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c i f (a) v f (v) v r (v) i r (ma) C4D20120A rev. c
3 0 20 40 60 80 100 120 140 0 200 400 600 800 1000 1200 80 100 120 140 160 180 0 20 40 60 25 50 75 100 125 150 175 figure 3. current derating figure 4. power derating 0 50 100 150 200 250 25 50 75 100 125 150 175 figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage typical performance 10% duty 20% duty 30% duty 50% duty 70% duty dc 0 200 400 600 800 1000 1200 1400 1600 0.1 1 10 100 1000 i f(peak) (a) t c ?c p tot (w) t c ?c c (pf) v r (v) qrr (nc) v r (v) C4D20120A rev. c
4 20.0 25.0 30.0 35.0 40.0 45.0 50.0 capacitive energy (uj) 0.0 5.0 10.0 15.0 0 200 400 600 800 1000 e c capacitive energy (uj) v r reverse voltage (v) typical performance 1000 10000 i fsm (a) 10 100 1.e-05 1.e-04 1.e-03 1.e-02 tp(s) 10000 1000 100 10 figure 7. typical capacitance stored energy figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) t j = 25c t j = 110c v r (v) 50 45 40 35 30 25 20 15 10 5 0 0 200 400 600 800 1000 e c ( p j) 1e-05 1e-04 1e-03 1e-02 figure 9. transient thermal impedance 10e - 3 100e-3 1 0.5 0.3 0.1 0.05 0.02 singlepulse 1e-3 10e - 3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 0.01 singlepulse p t (sec) C4D20120A rev. c
5 a c e d g h b j l m n f p q s t u v w x y m i n m a x m i n m a x a . 3 9 5 . 4 1 0 1 0 . 0 3 3 1 0 . 4 1 4 b . 2 3 5 . 2 5 5 5 . 9 6 9 6 . 4 7 7 c . 1 0 2 . 1 1 2 2 . 5 9 1 2 . 8 4 5 d . 3 3 7 . 3 3 7 8 . 5 6 0 8 . 5 6 0 e . 5 9 0 . 6 1 0 1 4 . 9 8 6 1 5 . 4 9 4 f . 1 4 9 . 1 5 3 3 . 7 8 5 3 . 8 8 6 g 1 . 1 2 7 1 . 1 4 7 2 8 . 6 2 6 2 9 . 1 3 4 h . 5 3 0 . 5 5 0 1 3 . 4 6 2 1 3 . 9 7 0 j l . 0 2 8 . 0 3 6 . 7 1 1 . 9 1 4 m . 0 4 5 . 0 5 5 1 . 1 4 3 1 . 3 9 7 n . 1 9 5 . 2 0 5 4 . 9 5 3 5 . 2 0 7 p . 1 7 0 . 1 8 0 4 . 3 1 8 4 . 5 7 2 q . 0 4 8 . 0 5 4 1 . 2 1 9 1 . 3 7 1 s 3 5 3 5 t 3 5 3 5 u 3 5 3 5 v . 1 0 0 . 1 1 0 2 . 5 4 2 . 7 9 4 w . 0 1 4 . 0 2 1 . 3 5 6 . 5 3 3 x 3 5 3 5 y . 3 9 5 . 4 1 0 1 0 . 0 3 3 1 0 . 4 1 4 z . 1 3 0 . 1 5 0 3 . 3 0 2 3 . 8 1 0 i n c h e s m i l l i m e t e r s p o s r 0 . 0 1 0 r 0 . 2 5 4 1 2 z package dimensions package to-220-2 pos inches millimeters min max min max a .381 .410 9.677 10.414 b .235 .255 5.969 6.477 c .100 .120 2.540 3.048 d .223 .337 5.664 8.560 e .590 .615 14.986 15.621 f .143 .153 3.632 3.886 g 1.105 1.147 28.067 29.134 h .500 .550 12.700 13.970 j r 0.197 r 0.197 l .025 .036 .635 .914 m .045 .055 1.143 1.397 n .195 .205 4.953 5.207 p .165 .185 4.191 4.699 q .048 .054 1.219 1.372 s 3 6 3 6 t 3 6 3 6 u 3 6 3 6 v .094 .110 2.388 2.794 w .014 .025 .356 .635 x 3 5.5 3 5.5 y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 note: 1. dimension l, m, w apply for solder dip finish pin 1 pin 2 case recommended solder pad layout part number package marking C4D20120A to-220-2 c4d20120 to-220-2 note: recommended soldering profles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering C4D20120A rev. c
6 6 diode model note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c v t r t diode model csd04060 vf t = v t + if*r t v t= 0.965 + (t j * - 1.3*10 - 3 ) r t= 0.096 + (t j * 1.0 6 *10 - 3 ) v ft = v t +if*r t v t = 0.97+(t j * -1.40*10 -3 ) r t = 0.023+(t j * 2.71*10 -4 ) C4D20120A rev. c copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes
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